Part Number Hot Search : 
L7405 NTE56069 C705SP7S TA123 255L050 EPF8232S HSB772S MBR8020R
Product Description
Full Text Search
 

To Download BGA612 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Data sheet, BGA612, Nov. 2003
BGA 612
Silicon Germanium B r o a d b a n d M M I C A m p li f i e r
MMIC
Secure Mo bile Solu ti ons Silico n Discre te s
Never stop thinking.
Edition 2003-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGA612 Data sheet Revision History: Previous Version: Page
2003-11-04 2002-05-27
Subjects (major changes since last revision) Preliminary status removed
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com
Silicon Germanium Broadband MMIC Amplifier
BGA612
Features * Cascadable 50-gain block * 3 dB-bandwidth: DC to 2.8 GHz with 17.0 dB typical gain at 1.0 GHz * Compression point P-1dB = 7 dBm at 2.0 GHz * Noise figure F50 = 2.35 dB at 2.0 GHz * Absolute stable * 70 GHz fT - Silicon Germanium technology Applications * Driver amplifier for GSM/PCS/CDMA/UMTS * Broadband amplifier for SAT-TV & LNBs * Broadband amplifier for CATV
3 4
2 1
VPS05605
Out, 3
Description The BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 20mA. The BGA612 is based on Infineon Technologies' B7HF Silicon Germanium technology.
IN, 1
GND, 2,4
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA612
Data sheet
Package SOT343
Marking BNs
4
Chip T0545
2003-11-04
BGA612
Maximum Ratings Parameter Device voltage Device current Current into pin In Input power 1) Total power dissipation, TS < 105C Junction temperature Ambient temperature range Storage temperature range Thermal resistance: junction-soldering point
Notes: All Voltages refer to GND-Node 1) Valid for ZS=ZL=50, VCC=5V, RBias=135 2) TS is measured on the ground lead at the soldering point
2)
Symbol VD ID IIn PIn Ptot Tj TA TSTG Rth JS
Value 2.8 80 0.7 10 225 150 -65 ... +150 -65 ... +150 200
Unit V mA mA dBm mW C C C K/W
Electrical Characteristics at TA=25C (measured in test circuit specified in fig. 1) VCC=5V, RBias=135, Frequency=2GHz, unless otherwise specified Parameter Insertion power gain f = 0.1GHz f = 1.0GHz f = 2.0GHz Noise Figure (ZS=50) f = 0.1GHz f = 1.0GHz f = 2.0GHz Output Power at 1dB Gain Compression Output Third Order Intercept Point Input Return Loss Output Return Loss Total Device Current Symbol |S21|
2
min. -
typ. 17.5 17.0 15.8 1.95 2.25 2.35 7 17 18 21 20
max. -
Unit dB
F50 P-1dB OIP3 RLIn RLOut ID -
dB
dBm dBm dB dB mA
Data sheet
5
2003-11-04
BGA612 Data sheet
Reference Plane
VCC= 5V
In Bias-T In GND ID GND Out Reference Plane VD
RBias = 135
Bias-T Out
Top View
Caution: Device Voltage VD at Pin Out! VD = VCC - RBias I D
Fig.1: Test Circuit for Electrical Characteristics and S-Parameters
S-Parameter VCC=5V, RBias=135 (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.1803 0.1146 0.1345 0.1307 0.1310 0.1341 0.1337 0.1311 0.1302 0.1257 0.1258 0.0878 0.0409 0.0517 0.1209 0.1796 0.2594
S11 Ang
5.5 7.3 7.4 4.4 5.5 3.3 3.8 3.8 3.8 -1.7 -3.5 -9.4 5.2 119.1 131.0 114.7 104.3
S21 Mag
7.6542 7.7188 7.6068 7.5301 7.3697 7.1755 6.9799 6.7873 6.5728 6.3555 6.1539 5.2390 4.4689 3.8775 3.3943 2.9678 2.6995
S21 Ang
177.5 173.3 166.6 159.7 153.2 146.6 140.8 134.4 129.2 123.6 118.4 94.7 74.0 54.8 36.2 20.2 2.8
S12 Mag
0.0960 0.0964 0.0956 0.0965 0.0961 0.0969 0.0978 0.0986 0.1002 0.1018 0.1044 0.1172 0.1346 0.1544 0.1737 0.1929 0.2132
S12 Ang
0.0 1.2 1.8 2.8 4.0 5.1 6.4 6.7 8.1 8.8 9.6 12.1 11.6 8.7 3.3 -2.4 -10.7
S22 Mag
0.1497 0.1499 0.1503 0.1457 0.1384 0.1292 0.1198 0.1111 0.1033 0.0958 0.0891 0.0823 0.1550 0.2362 0.2929 0.3527 0.4330
S22 Ang
-1.2 -4.6 -11.3 -18.2 -25.5 -33.0 -40.2 -48.5 -57.4 -67.5 -78.0 -146.8 170.5 148.3 129.2 115.2 104.6
Data sheet
6
2003-11-04
BGA612 Data sheet
Power Gain |S | , G = f(f) 21 ma V = 5V, R = 135, I = 20mA
CC Bias C
20 18 16
2
Matching |S |, |S | = f(f) 11 22 V = 5V, R = 135, I = 20mA
CC Bias C
0
Gma |S21|2
-5
14 -10
|S21| , Gma [dB]
12 10 8 6 4
|S |, |S | [dB]
22
S
-15
22
2
11
S
-20
11
-25 2 0 -1 10 -30 -1 10
10
0
10
1
10
0
10
1
Frequency [GHz]
Frequency [GHz]
Power Gain |S | = f(I ) 21 D f = parameter in GHz
20
Output Compression Point P = f(I ), f = 2GHz
-1dB
20
D
1
18 16 14 12
2
18 16
3 4
14 12 10 8 6 4 2 0
|S21| [dB]
8 6 4 2 0 0 20 40 60
8
80
P
-1dB
10
2
6
[dBm]
0
20
40
60
80
ID [mA]
ID [mA]
Data sheet
7
2003-11-04
BGA612 Data sheet
Device Current I = f(V ) D CC R = parameter in
Bias
80
Device Current I = f(T ) D A V = 5V, R = parameter in
CC Bias
25
0
70
16
27
47
24
120
23
60 22
68
50 21
135
I D [mA]
40
I [mA]
20 19
100
30
D
150
150
20
18 17
10
16 15 -40
0 0 1 2 3 4 5 6
-20
0
20
40
60
80
VCC [V]
TA [C]
Noise figure F = f(f) V = 5V, R = 135, Z = 50 CC Bias S T = parameter in C
A
3
Package Outline
2 0.2 1.3 0.1 0.9 0.1 0.20 3
M
B B
0.1 max A
+80C
2.5
4
+25C
2
1
2 0.15 +0.1 -0.05 0.6 +0.1 0.20
M
-20C F [dB]
1.5
0.3 +0.1
A
GPS05605
1
0.5
0 0 0.5 1 1.5 2 2.5 3
Frequency [GHz]
Data sheet
8
2003-11-04
1.25 0.1
2.10.1
+0.2 acc. to DIN 6784


▲Up To Search▲   

 
Price & Availability of BGA612

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X